MPN

Infineon FP75R12KT4B11BOSA1 IGBT Module 1200 V

Name: Infineon FP75R12KT4B11BOSA1 IGBT Module 1200 V
Brand: Infineon
SKU: 244-5848
Price: 2935.34 ZAR
Availability: BackOrder

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Bulk discount available

Subtotal (1 unit)*

R 2 552,47

(exc. VAT)

R 2 935,34

(inc. VAT)

Temporarily out of stock

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

*price indicative

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	IGBT Module
	Maximum Collector Emitter Voltage Vceo	1200V
	Number of Transistors	7
	Maximum Power Dissipation Pd	385W
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.15V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Length	122mm
	Height	17mm
	Series	FP75R12KT4B11B
	Standards/Approvals	RoHS
	Width	62 mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type IGBT Module
	Maximum Collector Emitter Voltage Vceo 1200V
	Number of Transistors 7
	Maximum Power Dissipation Pd 385W
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.15V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Length 122mm
	Height 17mm
	Series FP75R12KT4B11B
	Standards/Approvals RoHS
	Width 62 mm
	Automotive Standard No

The infineon IGBT module is suitable for auxiliary inverters, motor drives, servo drives etc.

Electrical Features

Low switching losses

Tvj op = 150° C

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

High power and thermal cycling capability

Integrated NTC temperature sensor

Copper base plate

Pressfit contact technology

Standard housing

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