Infineon IGBT Module 1200 V EconoPIM

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Subtotal (1 tray of 10 units)*

R 16 939,85

(exc. VAT)

R 19 480,83

(inc. VAT)

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  • Shipping from 18 August 2026
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Units
Per unit
Per Tray*
10 - 10R 1,693.985R 16,939.85
20 - 20R 1,651.635R 16,516.35
30 +R 1,602.086R 16,020.86

*price indicative

RS stock no.:
244-5851
Mfr. Part No.:
FP75R12KT4BOSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

385W

Number of Transistors

7

Package Type

EconoPIM

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Length

122mm

Series

FP75R12KT4B

Width

62.5 mm

Standards/Approvals

RoHS

Height

17mm

Automotive Standard

No

The infineon IGBT module the maximum rated collector emitter voltage is 1200 V and toatal power dissipation is 355 W, maximum gate threshold voltage is 6.5 V.

Internal isolation basic insulation (class 1, IEC 61140)

Gate-emitter peak voltage + /- 20 V

Collector-emitter saturation voltage 2.15 V

Gate-emitter leakage current 400 nA

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