Infineon FP15R12W1T4BOMA1 IGBT Module 1200 V

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Subtotal (1 unit)*

R 893,39

(exc. VAT)

R 1 027,40

(inc. VAT)

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Units
Per unit
1 - 1R 893.39
2 - 2R 871.06
3 - 3R 844.93
4 - 4R 811.13
5 +R 778.68

*price indicative

Packaging Options:
RS stock no.:
244-5387
Mfr. Part No.:
FP15R12W1T4BOMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

130W

Number of Transistors

7

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.25V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

12mm

Length

62.8mm

Width

33.8 mm

Series

FP15R12W1T4B

Automotive Standard

No

The infineon IGBT module is suitable for auxiliary inverters, motor drives and air conditioning etc.

Electrical features

Low switching losses, low inductive design

Trench IGBT 3

VCEsat with positive temperature coefficient

Low VCEsat

Mechanical features

Al2O3 substrate with low thermal resistance

Compact design

Solder contact technology

Rugged mounting due to integrated mounting clamps

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