STMicroelectronics STGYA50H120DF2 IGBT 1200 V, 3-Pin

Image representative of range

View all IGBTs
Bulk discount available

Subtotal (1 unit)*

R 120,77

(exc. VAT)

R 138,89

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 290 unit(s) shipping from 30 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
1 - 1R 120.77
2 - 4R 117.75
5 - 9R 114.22
10 - 14R 109.65
15 +R 105.26

*price indicative

Packaging Options:
RS stock no.:
244-3195
Mfr. Part No.:
STGYA50H120DF2
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

535W

Pin Count

3

Switching Speed

5μs

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Series

H

Automotive Standard

No

The STMicroelectronics IGBT developed using an advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature TJ = 175 °C

5 μs of short-circuit withstand time

Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A

Tight parameter distribution

Positive VCE(sat) temperature coefficient

Low thermal resistance

Very fast recovery antiparallel diode

Related links