STMicroelectronics STGD5NB120SZT4, Type N-Channel IGBT, 5 A 1200 V, 3-Pin TO-252, Surface
- RS stock no.:
- 877-2879
- Mfr. Part No.:
- STGD5NB120SZT4
- Manufacturer:
- STMicroelectronics
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View bulk pricing optionSubtotal (1 pack of 5 units)*
R 147,54
(exc. VAT)
R 169,67
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 1,890 unit(s) ready to ship from another location
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | R 29.508 | R 147.54 |
| 25 - 95 | R 28.77 | R 143.85 |
| 100 - 245 | R 27.906 | R 139.53 |
| 250 - 495 | R 26.79 | R 133.95 |
| 500 + | R 25.718 | R 128.59 |
*price indicative
- RS stock no.:
- 877-2879
- Mfr. Part No.:
- STGD5NB120SZT4
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 5A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 75W | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 690ns | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.2mm | |
| Height | 2.2mm | |
| Standards/Approvals | JEDEC JESD97, ECOPACK | |
| Series | H | |
| Energy Rating | 12.68mJ | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 5A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 75W | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 690ns | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 150°C | ||
Length 6.2mm | ||
Height 2.2mm | ||
Standards/Approvals JEDEC JESD97, ECOPACK | ||
Series H | ||
Energy Rating 12.68mJ | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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