Infineon IKQ75N120CH3XKSA1 IGBT, 75 A 1200 V, 3-Pin TO-247
- RS stock no.:
- 260-5099
- Mfr. Part No.:
- IKQ75N120CH3XKSA1
- Manufacturer:
- Infineon
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Subtotal (1 unit)*
R 212,34
(exc. VAT)
R 244,19
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 110 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 4 | R 212.34 |
| 5 - 9 | R 207.03 |
| 10 - 24 | R 200.82 |
| 25 - 99 | R 192.79 |
| 100 + | R 185.08 |
*price indicative
- RS stock no.:
- 260-5099
- Mfr. Part No.:
- IKQ75N120CH3XKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 938W | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.35V | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 15.9 mm | |
| Length | 41.2mm | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 938W | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.35V | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 15.9 mm | ||
Length 41.2mm | ||
Height 5.1mm | ||
Automotive Standard No | ||
The Infineon hard switching high speed IGBT3 in a TO247 package copacked with a soft and fast recovery full current anti-parallel emitter controlled diode.
High efficiency in hard switching and resonant topologies
Easy paralleling capability due to positive temperature
Low gate charge QG
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