STMicroelectronics STGYA50H120DF2 Series IGBT, 50 A 1200 V Max247 long leads
- RS stock no.:
- 244-3194
- Mfr. Part No.:
- STGYA50H120DF2
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 30 units)*
R 3 548,73
(exc. VAT)
R 4 081,05
(inc. VAT)
Add 30 units to get free delivery
In Stock
- Plus 270 unit(s) shipping from 23 February 2026
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Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | R 118.291 | R 3,548.73 |
| 60 - 60 | R 115.334 | R 3,460.02 |
| 90 + | R 111.874 | R 3,356.22 |
*price indicative
- RS stock no.:
- 244-3194
- Mfr. Part No.:
- STGYA50H120DF2
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 50 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 535 W | |
| Configuration | Series | |
| Package Type | Max247 long leads | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 50 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 535 W | ||
Configuration Series | ||
Package Type Max247 long leads | ||
The STMicroelectronics IGBT developed using an advanced proprietary trench gate field stop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Maximum junction temperature TJ = 175 °C
5 μs of short-circuit withstand time
Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast recovery antiparallel diode
5 μs of short-circuit withstand time
Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A
Tight parameter distribution
Positive VCE(sat) temperature coefficient
Low thermal resistance
Very fast recovery antiparallel diode
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