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STMicroelectronics STGF3NC120HD, Type N-Channel IGBT, 6 A 1200 V, 3-Pin TO-220, Through Hole

RS stock no.:: 795-9094
Mfr. Part No.:: STGF3NC120HD
Manufacturer:: STMicroelectronics

STMicroelectronics STGF3NC120HD, Type N-Channel IGBT, 6 A 1200 V, 3-Pin TO-220, Through Hole

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Bulk discount available

Subtotal (1 pack of 5 units)*

R 200,16

(exc. VAT)

R 230,185

(inc. VAT)

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Units	Per unit	Per Pack*
5 - 5	R 40.032	R 200.16
10 - 95	R 39.032	R 195.16
100 - 495	R 37.862	R 189.31
500 - 995	R 36.348	R 181.74
1000 +	R 34.894	R 174.47

*price indicative

RS stock no.:: 795-9094
Mfr. Part No.:: STGF3NC120HD
Manufacturer:: STMicroelectronics

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	STMicroelectronics
	Maximum Continuous Collector Current Ic	6A
	Product Type	IGBT
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	25W
	Package Type	TO-220
	Mount Type	Through Hole
	Channel Type	Type N
	Pin Count	3
	Switching Speed	1MHz
	Minimum Operating Temperature	-55°C
	Maximum Gate Emitter Voltage VGEO	20 V
	Maximum Collector Emitter Saturation Voltage VceSAT	2.8V
	Maximum Operating Temperature	150°C
	Height	16.4mm
	Length	10.4mm
	Width	4.6 mm
	Standards/Approvals	No
	Automotive Standard	No

	Select all
	Brand STMicroelectronics
	Maximum Continuous Collector Current Ic 6A
	Product Type IGBT
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 25W
	Package Type TO-220
	Mount Type Through Hole
	Channel Type Type N
	Pin Count 3
	Switching Speed 1MHz
	Minimum Operating Temperature -55°C
	Maximum Gate Emitter Voltage VGEO 20 V
	Maximum Collector Emitter Saturation Voltage VceSAT 2.8V
	Maximum Operating Temperature 150°C
	Height 16.4mm
	Length 10.4mm
	Width 4.6 mm
	Standards/Approvals No
	Automotive Standard No

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

STMicroelectronics STGF3NC120HD, Type N-Channel IGBT, 6 A 1200 V, 3-Pin TO-220, Through Hole

IGBT Discretes, STMicroelectronics

IGBT Discretes & Modules, STMicroelectronics

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