Infineon, Type N-Channel IGBT, 30 A 600 V, 3-Pin TO-252, Surface
- RS stock no.:
- 215-6656
- Mfr. Part No.:
- IKD15N60RATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 reel of 2500 units)*
R 21 735,00
(exc. VAT)
R 24 995,00
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 2500 | R 8.694 | R 21,735.00 |
| 5000 - 5000 | R 8.477 | R 21,192.50 |
| 7500 + | R 8.222 | R 20,555.00 |
*price indicative
- RS stock no.:
- 215-6656
- Mfr. Part No.:
- IKD15N60RATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 30A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 20kHz | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC | |
| Series | TrenchStop | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 30A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 20kHz | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC | ||
Series TrenchStop | ||
Automotive Standard No | ||
The Infineon insulated-gate bipolar transistor with integrated diode in packages offering space saving advantage.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
Related links
- Infineon IKD15N60RATMA1 IGBT 3-Pin PG-TO252-3
- Infineon IKD15N60RFATMA1 Single IGBT 3-Pin PG-TO252
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 3-Pin PG-TO252-3 IPD040N03LF2SATMA1
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 3-Pin PG-TO252-3 IPD023N03LF2SATMA1
- Infineon OptiMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO252-3
- Infineon OptiMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO252-3 IPD60R1K0PFD7SAUMA1
- Infineon SPD04P10PL G Type P-Channel MOSFET 100 V Enhancement, 3-Pin PG-TO252-3
- Infineon SPD18P06P G Type P-Channel MOSFET 60 V Enhancement, 3-Pin PG-TO252-3