Infineon IKD15N60RATMA1, Type N-Channel IGBT, 30 A 600 V, 3-Pin TO-252, Surface

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Subtotal (1 pack of 5 units)*

R 52,66

(exc. VAT)

R 60,56

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 5R 10.532R 52.66
10 - 95R 10.268R 51.34
100 - 245R 9.96R 49.80
250 - 495R 9.562R 47.81
500 +R 9.18R 45.90

*price indicative

Packaging Options:
RS stock no.:
215-6657
Mfr. Part No.:
IKD15N60RATMA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current Ic

30A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

600V

Maximum Power Dissipation Pd

250W

Package Type

TO-252

Mount Type

Surface

Channel Type

Type N

Pin Count

3

Switching Speed

20kHz

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.1V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Standards/Approvals

JEDEC

Series

TrenchStop

Automotive Standard

No

The Infineon insulated-gate bipolar transistor with integrated diode in packages offering space saving advantage.

High Efficiency

Low Switching Losses

Increased Reliability

Low Electromagnetic Interference

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