Infineon OptiMOS Type N-Channel MOSFET, 4.7 A, 600 V Enhancement, 3-Pin PG-TO252-3

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Subtotal (1 pack of 10 units)*

R 138,23

(exc. VAT)

R 158,96

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40R 13.823R 138.23
50 - 90R 13.477R 134.77
100 - 240R 13.073R 130.73
250 - 990R 12.55R 125.50
1000 +R 12.048R 120.48

*price indicative

RS stock no.:
273-3010
Mfr. Part No.:
IPD60R1K0PFD7SAUMA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

4.7A

Maximum Drain Source Voltage Vds

600V

Package Type

PG-TO252-3

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Maximum Power Dissipation Pd

26W

Typical Gate Charge Qg @ Vgs

6nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon 600V cool MOS PFD7 super junction MOSFET complements the cool MOS 7 offering for consumer applications. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD pac

BOM cost reduction and easy manufacturing

Robustness and reliability

Easy to select the right parts for design fine-tuning

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