Infineon OptiMOS Type N-Channel MOSFET, 4.7 A, 600 V Enhancement, 3-Pin PG-TO252-3
- RS stock no.:
- 273-3010
- Mfr. Part No.:
- IPD60R1K0PFD7SAUMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 10 units)*
R 115,13
(exc. VAT)
R 132,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,470 unit(s) shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 40 | R 11.513 | R 115.13 |
| 50 - 90 | R 11.225 | R 112.25 |
| 100 - 240 | R 10.888 | R 108.88 |
| 250 - 990 | R 10.452 | R 104.52 |
| 1000 + | R 10.034 | R 100.34 |
*price indicative
- RS stock no.:
- 273-3010
- Mfr. Part No.:
- IPD60R1K0PFD7SAUMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.7A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | PG-TO252-3 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Maximum Power Dissipation Pd | 26W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.7A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type PG-TO252-3 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Maximum Power Dissipation Pd 26W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The Infineon 600V cool MOS PFD7 super junction MOSFET complements the cool MOS 7 offering for consumer applications. The products come with an integrated fast body diode ensuring a robust device. The fast body diode and Infineon's industry-leading SMD pac
BOM cost reduction and easy manufacturing
Robustness and reliability
Easy to select the right parts for design fine-tuning
Related links
- Infineon OptiMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin PG-TO252-3 IPD60R1K0PFD7SAUMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 3-Pin PG-TO252-3
- Infineon OptiMOS Type N-Channel MOSFET 950 V Enhancement, 3-Pin PG-TO252-3
- Infineon OptiMOS Type N-Channel MOSFET 650 V Enhancement, 3-Pin PG-TO252-3 IPD60R600CM8XTMA1
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 3-Pin PG-TO252-3 IPD047N03LF2SATMA1
- Infineon OptiMOS Type N-Channel MOSFET 80 V Enhancement, 3-Pin PG-TO252-3 IPD046N08N5ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 3-Pin PG-TO252-3 IPD020N03LF2SATMA1
- Infineon OptiMOS Type N-Channel MOSFET 30 V Enhancement, 3-Pin PG-TO252-3 IPD030N03LF2SATMA1