Infineon OptiMOS Type N-Channel MOSFET, 137 A, 30 V Enhancement, 3-Pin PG-TO252-3 IPD023N03LF2SATMA1
- RS stock no.:
- 349-427
- Mfr. Part No.:
- IPD023N03LF2SATMA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 10 units)*
R 207,31
(exc. VAT)
R 238,41
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 2,000 unit(s) shipping from 29 December 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 10 - 90 | R 20.731 | R 207.31 |
| 100 - 240 | R 20.213 | R 202.13 |
| 250 - 490 | R 19.607 | R 196.07 |
| 500 - 990 | R 18.823 | R 188.23 |
| 1000 + | R 18.07 | R 180.70 |
*price indicative
- RS stock no.:
- 349-427
- Mfr. Part No.:
- IPD023N03LF2SATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 137A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS | |
| Package Type | PG-TO252-3 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2.35mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 107W | |
| Typical Gate Charge Qg @ Vgs | 39nC | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 137A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS | ||
Package Type PG-TO252-3 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2.35mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 107W | ||
Typical Gate Charge Qg @ Vgs 39nC | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals DIN IEC 68-1: 55/175/56, IEC61249-2-21, RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon StrongIRFET 2 power MOSFET 30 V technology features a best in class RDS(on) of 2.3 mOhm in a DPAK package. This product addresses a broad range of applications from low to high switching frequency.
General purpose products
Excellent robustness
Broad availability at distributors
Standard packages and pin out
High manufacturing and supply standards
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