STMicroelectronics STGWA75H65DFB2 IGBT, 115 A 650 V, 3-Pin TO-247
- RS stock no.:
- 206-7211
- Mfr. Part No.:
- STGWA75H65DFB2
- Manufacturer:
- STMicroelectronics
Bulk discount available
Subtotal (1 tube of 30 units)*
R 2 077,62
(exc. VAT)
R 2 389,26
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 11 May 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | R 69.254 | R 2,077.62 |
| 120 - 240 | R 67.522 | R 2,025.66 |
| 270 - 480 | R 65.497 | R 1,964.91 |
| 510 - 990 | R 62.877 | R 1,886.31 |
| 1020 + | R 60.362 | R 1,810.86 |
*price indicative
- RS stock no.:
- 206-7211
- Mfr. Part No.:
- STGWA75H65DFB2
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current | 115 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 357 W | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current 115 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 357 W | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
The STMicroelectronics Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package.
Maximum junction temperature: TJ = 175 °C
Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive VCE(sat) temperature coefficient
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