STMicroelectronics STGWA75H65DFB2, Type N-Channel IGBT, 115 A 650 V, 3-Pin TO-247, Through Hole

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Subtotal (1 pack of 2 units)*

R 164,89

(exc. VAT)

R 189,624

(inc. VAT)

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2 - 8R 82.445R 164.89
10 +R 80.385R 160.77

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Packaging Options:
RS stock no.:
206-7212
Mfr. Part No.:
STGWA75H65DFB2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

115A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

357W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Minimum Operating Temperature

-55°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Operating Temperature

175°C

Length

15.9mm

Width

21.1 mm

Series

STG

Standards/Approvals

RoHS

Height

5.1mm

Automotive Standard

No

The STMicroelectronics Trench gate field-stop, 650 V, 75 A, high-speed HB2 series IGBT in a TO-247 long leads package.

Maximum junction temperature: TJ = 175 °C

Low VCE(sat) = 1.55 V(typ.) @ IC = 75 A

Very fast and soft recovery co-packaged diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

Positive VCE(sat) temperature coefficient

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