STMicroelectronics, Type N-Channel IGBT, 30 A 650 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 202-5514
- Mfr. Part No.:
- STGWA30HP65FB
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 tube of 30 units)*
R 1 330,26
(exc. VAT)
R 1 529,79
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 18 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | R 44.342 | R 1,330.26 |
| 120 - 240 | R 43.233 | R 1,296.99 |
| 270 - 570 | R 41.936 | R 1,258.08 |
| 600 - 1170 | R 40.259 | R 1,207.77 |
| 1200 + | R 38.649 | R 1,159.47 |
*price indicative
- RS stock no.:
- 202-5514
- Mfr. Part No.:
- STGWA30HP65FB
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 30A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 260W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Length | 15.9mm | |
| Width | 21.1 mm | |
| Standards/Approvals | RoHS | |
| Series | STG | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current Ic 30A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 260W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Length 15.9mm | ||
Width 21.1 mm | ||
Standards/Approvals RoHS | ||
Series STG | ||
Automotive Standard No | ||
The STMicroelectronics high speed HB series IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.
Low thermal resistance
Very fast soft recovery antiparallel diode
Related links
- STMicroelectronics STGWA30HP65FB IGBT 3-Pin TO-247
- Infineon IKWH30N65WR6XKSA1 Single IGBT 3-Pin TO-247-3-HCC, Through Hole
- Infineon IKWH30N65WR5XKSA1 Single IGBT 3-Pin TO-247-3-HCC, Through Hole
- STMicroelectronics IGBT 3-Pin TO-247
- STMicroelectronics STGWA100H65DFB2 IGBT 3-Pin TO-247
- STMicroelectronics STGWA30H65DFB2 IGBT 3-Pin TO-247
- STMicroelectronics STGWA50HP65FB2 IGBT 3-Pin TO-247
- STMicroelectronics STGWA40IH65DF IGBT 3-Pin TO-247