STMicroelectronics IGBT, 80 A 650 V, 3-Pin TO-247
- RS stock no.:
- 261-5071
- Mfr. Part No.:
- STGWA80H65DFBAG
- Manufacturer:
- STMicroelectronics
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Bulk discount available
Subtotal (1 tube of 30 units)*
R 2 666,01
(exc. VAT)
R 3 065,91
(inc. VAT)
Add 30 units to get free delivery
Temporarily out of stock
- Shipping from 22 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 30 | R 88.867 | R 2,666.01 |
| 60 - 60 | R 86.646 | R 2,599.38 |
| 90 + | R 84.046 | R 2,521.38 |
*price indicative
- RS stock no.:
- 261-5071
- Mfr. Part No.:
- STGWA80H65DFBAG
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 80A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 535W | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 15V | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Operating Temperature | 175°C | |
| Series | STGWA | |
| Standards/Approvals | No | |
| Height | 5mm | |
| Length | 15.8mm | |
| Width | 21 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 80A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 535W | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 15V | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Operating Temperature 175°C | ||
Series STGWA | ||
Standards/Approvals No | ||
Height 5mm | ||
Length 15.8mm | ||
Width 21 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT is developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
AEC-Q101 qualified
High-speed switching series
Maximum junction temperature TJ is 175 degree C
Minimized tail current
Tight parameter distribution
Positive temperature VCE(sat) coefficient
Soft and very fast recovery antiparallel diode
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