STMicroelectronics STGWA50HP65FB2 IGBT, 86 A 650 V, 3-Pin TO-247

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Subtotal (1 tube of 30 units)*

R 1 249,17

(exc. VAT)

R 1 436,55

(inc. VAT)

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Units
Per unit
Per Tube*
30 - 90R 41.639R 1,249.17
120 - 240R 40.598R 1,217.94
270 - 480R 39.38R 1,181.40
510 - 990R 37.804R 1,134.12
1020 +R 36.292R 1,088.76

*price indicative

RS stock no.:
204-3943
Mfr. Part No.:
STGWA50HP65FB2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

86 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Number of Transistors

1

Maximum Power Dissipation

272 W

Package Type

TO-247

Channel Type

N

Pin Count

3

Transistor Configuration

Single

COO (Country of Origin):
CN
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

Maximum junction temperature of 175°C
Co-packaged protection diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive temperature coefficient

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