STMicroelectronics STGWA30H65DFB2 IGBT, 50 A 650 V, 3-Pin TO-247

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Subtotal (1 tube of 30 units)*

R 1 480,68

(exc. VAT)

R 1 702,77

(inc. VAT)

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  • 630 unit(s) ready to ship from another location
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Units
Per unit
Per Tube*
30 - 90R 49.356R 1,480.68
120 - 270R 48.122R 1,443.66
300 - 570R 46.678R 1,400.34
600 - 1170R 44.811R 1,344.33
1200 +R 43.019R 1,290.57

*price indicative

RS stock no.:
204-9877
Mfr. Part No.:
STGWA30H65DFB2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

167 W

Package Type

TO-247

Pin Count

3

COO (Country of Origin):
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance

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