STMicroelectronics STGWA30H65DFB2 IGBT, 50 A 650 V, 3-Pin TO-247

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Bulk discount available

Subtotal (1 tube of 30 units)*

R 1 166,10

(exc. VAT)

R 1 341,00

(inc. VAT)

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Orders below R 1 500,00 (exc. VAT) cost R 120,00.
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Units
Per unit
Per Tube*
30 - 90R 38.87R 1,166.10
120 - 270R 37.898R 1,136.94
300 - 570R 36.761R 1,102.83
600 - 1170R 35.291R 1,058.73
1200 +R 33.879R 1,016.37

*price indicative

RS stock no.:
204-9877
Mfr. Part No.:
STGWA30H65DFB2
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

167 W

Package Type

TO-247

Pin Count

3

COO (Country of Origin):
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance

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