STMicroelectronics STGWA30H65DFB2, Type N-Channel IGBT, 50 A 650 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 204-9877
- Mfr. Part No.:
- STGWA30H65DFB2
- Manufacturer:
- STMicroelectronics
Image representative of range
Bulk discount available
Subtotal (1 tube of 30 units)*
R 1 149,12
(exc. VAT)
R 1 321,50
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 630 unit(s) shipping from 16 March 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 30 - 90 | R 38.304 | R 1,149.12 |
| 120 - 270 | R 37.346 | R 1,120.38 |
| 300 - 570 | R 36.226 | R 1,086.78 |
| 600 - 1170 | R 34.777 | R 1,043.31 |
| 1200 + | R 33.386 | R 1,001.58 |
*price indicative
- RS stock no.:
- 204-9877
- Mfr. Part No.:
- STGWA30H65DFB2
- Manufacturer:
- STMicroelectronics
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 167W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.9mm | |
| Height | 5.1mm | |
| Width | 21.1 mm | |
| Standards/Approvals | RoHS | |
| Series | STG | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 167W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 15.9mm | ||
Height 5.1mm | ||
Width 21.1 mm | ||
Standards/Approvals RoHS | ||
Series STG | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.
Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Related links
- STMicroelectronics STGWA30H65DFB2 IGBT 3-Pin TO-247
- onsemi AFGHL50T65SQD IGBT 3-Pin TO-247
- Infineon IKWH50N65WR6XKSA1 Single IGBT 3-Pin TO-247-3-HCC, Through Hole
- Infineon IGW50N65H5FKSA1 IGBT 3-Pin TO-247, Through Hole
- onsemi AFGHL50T65SQ IGBT 3-Pin TO-247
- ROHM RGW50TS65DGC13 Single IGBT 3-Pin TO-247GE, Through Hole
- ROHM RGW50TS65GC13 Single IGBT 3-Pin TO-247GE, Through Hole
- ROHM RGW00TS65CHRC11 Single IGBT 3-Pin TO-247N, Through Hole