STMicroelectronics STGWA50HP65FB2 IGBT, 86 A 650 V, 3-Pin TO-247

View all IGBTs
Bulk discount available

Subtotal (1 pack of 5 units)*

R 286,41

(exc. VAT)

R 329,37

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 580 unit(s) shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 5R 57.282R 286.41
10 +R 55.85R 279.25

*price indicative

Packaging Options:
RS stock no.:
204-3944
Mfr. Part No.:
STGWA50HP65FB2
Manufacturer:
STMicroelectronics
Find similar products by selecting one or more attributes.
Select all

Brand

STMicroelectronics

Maximum Continuous Collector Current

86 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

20V

Maximum Power Dissipation

272 W

Number of Transistors

1

Package Type

TO-247

Channel Type

N

Pin Count

3

Transistor Configuration

Single

COO (Country of Origin):
CN
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

Maximum junction temperature of 175°C
Co-packaged protection diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive temperature coefficient

Related links