STMicroelectronics STGWA30M65DF2AG IGBT, 87 A 650 V, 3-Pin TO-247 long leads, Through Hole

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R 58,12

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R 66,84

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1 - 9R 58.12
10 - 99R 56.67
100 - 499R 54.97
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1000 +R 50.66

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RS stock no.:
330-470
Mfr. Part No.:
STGWA30M65DF2AG
Manufacturer:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

87 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

441 W

Package Type

TO-247 long leads

Mounting Type

Through Hole

Pin Count

3

Exempt

COO (Country of Origin):
CN
The STMicroelectronics IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential.

Tight parameter distribution
Low thermal resistance
Soft and very fast-recovery antiparallel diode

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