Fairchild FGH75T65UPD_F085 IGBT, 150 A 650 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 124-1447
- Mfr. Part No.:
- FGH75T65UPD_F085
- Manufacturer:
- Fairchild Semiconductor
Unavailable
RS will no longer stock this product.
- RS stock no.:
- 124-1447
- Mfr. Part No.:
- FGH75T65UPD_F085
- Manufacturer:
- Fairchild Semiconductor
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Fairchild Semiconductor | |
| Maximum Continuous Collector Current | 150 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 375 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 15.6 x 4.7 x 20.6mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Fairchild Semiconductor | ||
Maximum Continuous Collector Current 150 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 375 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 15.6 x 4.7 x 20.6mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- KR
Automotive IGBT, Fairchild Semiconductor
A range of Field Stop Trench IGBTs from Fairchild Semiconductor that have been stress tested and meet the AEC-Q101 standard.
Features
• Positive temperaure co-efficient for easy parallel operation
• High current capability
• Low saturation voltage
• High input impedance
• Tightened parameter distribution
• High current capability
• Low saturation voltage
• High input impedance
• Tightened parameter distribution
RS Product Codes
864-8792 FGB20N60SFD_F085 IGBT 600V 20A D2PAK-2
864-8852 FGH40N60SMD_F085 IGBT 600V 40A TO247
864-8877 FGH60N60SMD_F085 IGBT 600V 60A TO247
135-8687 FGB40T65SPD_F085 IGBT 650V 40A TO263
135-8663 FGB40T65SPD_F085 IGBT 650V 40A TO263 (Pack of 800)
864-8871 FGH75T65UPD_F085 IGBT 650V 75A TO247
124-1447 FGH75T65UPD_F085 IGBT 650V 75A TO247 (Pack of 30)
864-8852 FGH40N60SMD_F085 IGBT 600V 40A TO247
864-8877 FGH60N60SMD_F085 IGBT 600V 60A TO247
135-8687 FGB40T65SPD_F085 IGBT 650V 40A TO263
135-8663 FGB40T65SPD_F085 IGBT 650V 40A TO263 (Pack of 800)
864-8871 FGH75T65UPD_F085 IGBT 650V 75A TO247
124-1447 FGH75T65UPD_F085 IGBT 650V 75A TO247 (Pack of 30)
Note
Quoted current ratings apply when junction temperature Tc = +100°C.
Standards
AEC-Q101
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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