Toshiba GT30J121 IGBT, 30 A 600 V, 3-Pin TO-3P, Through Hole
- RS stock no.:
- 796-5058
- Mfr. Part No.:
- GT30J121
- Manufacturer:
- Toshiba
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Subtotal (1 unit)*
R 87,83
(exc. VAT)
R 101,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- Plus 22 unit(s) shipping from 29 December 2025
- Plus 81 unit(s) shipping from 05 January 2026
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Units | Per unit |
|---|---|
| 1 - 24 | R 87.83 |
| 25 - 49 | R 85.63 |
| 50 - 199 | R 83.06 |
| 200 - 399 | R 79.74 |
| 400 + | R 76.55 |
*price indicative
- RS stock no.:
- 796-5058
- Mfr. Part No.:
- GT30J121
- Manufacturer:
- Toshiba
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Toshiba | |
| Maximum Continuous Collector Current | 30 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 170 W | |
| Package Type | TO-3P | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 15.9 x 4.8 x 20mm | |
| Maximum Operating Temperature | +150 °C | |
| Select all | ||
|---|---|---|
Brand Toshiba | ||
Maximum Continuous Collector Current 30 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 170 W | ||
Package Type TO-3P | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 15.9 x 4.8 x 20mm | ||
Maximum Operating Temperature +150 °C | ||
IGBT Discretes, Toshiba
IGBT Discretes & Modules, Toshiba
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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