Infineon IKW50N60H3FKSA1 IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 897-7239
- Mfr. Part No.:
- IKW50N60H3FKSA1
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 2 units)*
R 247,09
(exc. VAT)
R 284,154
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 05 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 123.545 | R 247.09 |
| 10 - 48 | R 120.455 | R 240.91 |
| 50 - 98 | R 116.84 | R 233.68 |
| 100 - 248 | R 112.165 | R 224.33 |
| 250 + | R 107.68 | R 215.36 |
*price indicative
- RS stock no.:
- 897-7239
- Mfr. Part No.:
- IKW50N60H3FKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 100 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 333 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Dimensions | 16.13 x 5.21 x 21.1mm | |
| Maximum Operating Temperature | +175 °C | |
| Energy Rating | 2.55mJ | |
| Minimum Operating Temperature | -40 °C | |
| Gate Capacitance | 2960pF | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 100 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 333 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
Dimensions 16.13 x 5.21 x 21.1mm | ||
Maximum Operating Temperature +175 °C | ||
Energy Rating 2.55mJ | ||
Minimum Operating Temperature -40 °C | ||
Gate Capacitance 2960pF | ||
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Related links
- Infineon IKW50N60H3FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKW50N60TFKSA1 IGBT 3-Pin TO-247, Through Hole
- onsemi NGTB50N60FLWG IGBT 3-Pin TO-247, Through Hole
- Infineon IGW50N60H3FKSA1 IGBT 3-Pin PG-TO247-3, Through Hole
- Infineon IGW60T120FKSA1 IGBT 3-Pin TO-247, Through Hole
- Infineon IKQ100N120CH7XKSA1 Common Emitter IGBT 3-Pin TO-247, Through Hole
- Infineon IRGPS46160DPBF IGBT 3-Pin Super-247, Through Hole
- IXYS IXXK100N60C3H1 IGBT 3-Pin TO-264, Through Hole