Infineon IKW50N60H3FKSA1, Type N-Channel IGBT, 100 A 600 V, 3-Pin TO-247, Through Hole
- RS stock no.:
- 897-7239
- Mfr. Part No.:
- IKW50N60H3FKSA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 2 units)*
R 160,76
(exc. VAT)
R 184,88
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 14 December 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 80.38 | R 160.76 |
| 10 - 48 | R 78.37 | R 156.74 |
| 50 - 98 | R 76.02 | R 152.04 |
| 100 - 248 | R 72.98 | R 145.96 |
| 250 + | R 70.06 | R 140.12 |
*price indicative
- RS stock no.:
- 897-7239
- Mfr. Part No.:
- IKW50N60H3FKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 100A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 333W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 273ns | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V | |
| Maximum Operating Temperature | 175°C | |
| Series | TrenchStop | |
| Standards/Approvals | RoHS, JEDEC | |
| Energy Rating | 2.55mJ | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 100A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 333W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 273ns | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V | ||
Maximum Operating Temperature 175°C | ||
Series TrenchStop | ||
Standards/Approvals RoHS, JEDEC | ||
Energy Rating 2.55mJ | ||
Automotive Standard No | ||
Infineon TrenchStop IGBT Transistors, 600 and 650V
A range of IGBT Transistors from Infineon with collector-emitter voltage ratings of 600 and 650V featuring TrenchStop™ technology. The range includes devices with an integrated high speed, fast recovery anti-parallel diode.
• Collector-emitter voltage range 600 to 650V
• Very low VCEsat
• Low turn-off losses
• Short tail current
• Low EMI
• Maximum junction temperature 175°C
IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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