onsemi FGD3040G2-F085 IGBT, 41 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

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Subtotal (1 pack of 5 units)*

R 204,78

(exc. VAT)

R 235,495

(inc. VAT)

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Units
Per unit
Per Pack*
5 - 20R 40.956R 204.78
25 - 45R 39.932R 199.66
50 - 245R 38.734R 193.67
250 - 495R 37.184R 185.92
500 +R 35.696R 178.48

*price indicative

Packaging Options:
RS stock no.:
807-0767
Mfr. Part No.:
FGD3040G2-F085
Manufacturer:
onsemi
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Brand

onsemi

Maximum Continuous Collector Current

41 A

Maximum Collector Emitter Voltage

300 V

Maximum Gate Emitter Voltage

±10V

Maximum Power Dissipation

150 W

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Channel Type

N

Pin Count

3

Switching Speed

1MHz

Transistor Configuration

Single

Dimensions

6.73 x 6.22 x 2.39mm

Maximum Operating Temperature

+175 °C

Minimum Operating Temperature

-55 °C

Automotive Ignition IGBT, Fairchild Semiconductor


These EcoSPARK IGBT devices are optimised for driving automotive ignition coils. They have been stress tested and meet the AEC-Q101 standard.

Features


• Logic-level gate drive

• ESD Protection

• Applications: Automotive ignition coil driver circuits, Coil-on-Plug applications

RS Product Codes


864-8802 FGB3040CS 400V 20A D2PAK;864-8805 FGB3040G2_F085 400V 25A DPAK-2;807-0767 FGD3040G2_F085 400V 25A DPAK;864-8880 FGI3040G2_F085 400V 25A I2PAK;864-8899 FGP3040G2_F085 400V 25A TO220;864-8809 FGB3245G2_F085 450V 23A D2PAK-2;864-8827 FGD3245G2_F085 450V 23A DPAK;807-0776 FGD3440G2_F085 400V 25A DPAK;864-8818 FGB3440G2_F085 400V 25A D2PAK-2;864-8893 FGP3440G2_F085 400V 25A TO220;807-8751 ISL9V5036P3_F085 360V 31A TO220;862-9369 ISL9V5045S3ST_F085 450V 43A D2PAK

IGBT Discretes & Modules, Fairchild Semiconductor


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Note

Quoted current ratings apply when junction temperature Tc = +110°C.

Standards

AEC-Q101

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