Infineon IHW50N65R6XKSA1 IGBT, 83 A 650 V, 3-Pin PG-TO247-3

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Subtotal (1 pack of 2 units)*

R 127,11

(exc. VAT)

R 146,176

(inc. VAT)

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Orders below R 1 500,00 (exc. VAT) cost R 120,00.
In Stock
  • Plus 136 unit(s) shipping from 17 February 2026
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Units
Per unit
Per Pack*
2 - 8R 63.555R 127.11
10 - 98R 61.965R 123.93
100 - 248R 60.105R 120.21
250 - 498R 57.70R 115.40
500 +R 55.39R 110.78

*price indicative

Packaging Options:
RS stock no.:
225-0576
Mfr. Part No.:
IHW50N65R6XKSA1
Manufacturer:
Infineon
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Brand

Infineon

Maximum Continuous Collector Current

83 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

251 W

Package Type

PG-TO247-3

Pin Count

3

The Infineon IHW50N65R6 is the 650 V, 50 A IGBT with monolithically integrated diode in TO-247 package with monolithically integrated diode is designed to fulfil demanding requirements of induction heating applications using half-bridge resonant topology.

Frequency range 20-75 kHz
Low EMI
Very tight parameter distribution
Maximum operating TJ of 175 °C

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