N-Channel MOSFET, 30 A, 55 V, 3-Pin TO-220AB Infineon IRLZ34NPBF

RS stock no.:: 541-1247
Distrelec Article No.:: 303-41-411
Mfr. Part No.:: IRLZ34NPBF
Manufacturer:: Infineon

N-Channel MOSFET, 30 A, 55 V, 3-Pin TO-220AB Infineon IRLZ34NPBF

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250 - 499	R 23,09
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RS stock no.:: 541-1247
Distrelec Article No.:: 303-41-411
Mfr. Part No.:: IRLZ34NPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 55V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 68W Maximum Power Dissipation - IRLZ34NPBF

This high-performance N-channel MOSFET is designed for efficiency in various electronic applications. It has a maximum continuous drain current of 30A and can handle drain-source voltages of up to 55V. The enhanced mode capability ensures operation under various conditions, making it a valuable component for power management across different sectors.

Features & Benefits

• Low on-resistance of 35mΩ reduces power loss
• High power dissipation capability of 68W enhances performance
• Operating temperature range from -55°C to +175°C ensures versatility
• Typical gate charge of 25nC at 5V enables faster switching
• Compact TO-220AB package enables efficient PCB layout

Applications

• Utilised in DC-DC converters for efficient power conversion
• Appropriate for motor driver circuits in industrial automation
• Effective in power management systems for renewable energy
• Used in high-speed switching for telecommunications

What is the maximum gate-source voltage?

The device can withstand a maximum gate-source voltage of ±16V, ensuring safe operation in various circuits.

How does temperature affect its performance?

The MOSFET operates efficiently across a temperature range from -55°C to +175°C, maintaining stability in extreme conditions.

Can it be used in high-frequency applications?

Yes, it is designed with a typical gate charge of 25nC at 5V, making it suitable for high-frequency applications such as RF amplifiers.

What are the implications of low Rds(on)?

A lower Rds(on) value significantly reduces heat generation and power losses, improving overall efficiency in power supply designs.

Is it compatible with various electronic circuits?

This device is versatile and can be integrated into different circuit configurations, including automotive and industrial power electronics.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	30 A
Maximum Drain Source Voltage	55 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	35 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	68 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Length	10.54mm
Width	4.69mm
Transistor Material	Si
Typical Gate Charge @ Vgs	25 nC @ 5 V
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Forward Diode Voltage	1.3V
Height	8.77mm
Minimum Operating Temperature	-55 °C