Infineon OptiMOS 5 Type N-Channel MOSFET, 150 A, 100 V, 8-Pin SO-8 ISC0802NLSATMA1
- RS stock no.:
- 232-6757
- Mfr. Part No.:
- ISC0802NLSATMA1
- Manufacturer:
- Infineon
Image representative of range
Bulk discount available
Subtotal (1 pack of 2 units)*
R 113,34
(exc. VAT)
R 130,34
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 3,934 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 2 - 8 | R 56.67 | R 113.34 |
| 10 - 98 | R 55.255 | R 110.51 |
| 100 - 248 | R 53.595 | R 107.19 |
| 250 - 498 | R 51.45 | R 102.90 |
| 500 + | R 49.39 | R 98.78 |
*price indicative
- RS stock no.:
- 232-6757
- Mfr. Part No.:
- ISC0802NLSATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 150A | |
| Maximum Drain Source Voltage Vds | 100V | |
| Package Type | SO-8 | |
| Series | OptiMOS 5 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 4.8mΩ | |
| Typical Gate Charge Qg @ Vgs | 73nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 1.2 mm | |
| Length | 6.1mm | |
| Height | 5.35mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 150A | ||
Maximum Drain Source Voltage Vds 100V | ||
Package Type SO-8 | ||
Series OptiMOS 5 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 4.8mΩ | ||
Typical Gate Charge Qg @ Vgs 73nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 1.2 mm | ||
Length 6.1mm | ||
Height 5.35mm | ||
Automotive Standard No | ||
The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.
Logic level availability
Excellent thermal behaviour
100% avalanche tested
Related links
- Infineon OptiMOS™ 5 N-Channel MOSFET 100 V, 8-Pin SuperSO8 5 x 6 ISC0802NLSATMA1
- Infineon N-Channel MOSFET 150 V, 8-Pin SuperSO8 5 x 6 BSC074N15NS5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 150 V, 8-Pin SuperSO8 5 x 6 BSC093N15NS5ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 150 V, 8-Pin SuperSO8 5 x 6 BSC160N15NS5ATMA1
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 IPC100N04S51R7ATMA1
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 IPC100N04S5L2R6ATMA1
- Infineon OptiMOS™ 5 Silicon N-Channel MOSFET 40 V, 8-Pin SuperSO8 5 x 6 IPC100N04S5L1R9ATMA1
- Infineon OptiMOS™ 5 N-Channel MOSFET 100 V, 8-Pin SuperSO8 5 x 6 ISC0803NLSATMA1