Infineon OptiMOS 5 Type N-Channel MOSFET, 150 A, 100 V, 8-Pin SO-8 ISC0802NLSATMA1

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Subtotal (1 pack of 2 units)*

R 108,58

(exc. VAT)

R 124,86

(inc. VAT)

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Units
Per unit
Per Pack*
2 - 8R 54.29R 108.58
10 - 98R 52.935R 105.87
100 - 248R 51.345R 102.69
250 - 498R 49.29R 98.58
500 +R 47.32R 94.64

*price indicative

Packaging Options:
RS stock no.:
232-6757
Mfr. Part No.:
ISC0802NLSATMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

150A

Maximum Drain Source Voltage Vds

100V

Package Type

SO-8

Series

OptiMOS 5

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

4.8mΩ

Maximum Power Dissipation Pd

125W

Typical Gate Charge Qg @ Vgs

73nC

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Length

6.1mm

Height

5.35mm

Standards/Approvals

No

Width

1.2 mm

Automotive Standard

No

The Infineon's OptiMOS PD power MOSFET 100 V, are designed targeting USB-PD and adapter applications. It's SuperSO8 package offers fast ramp-up and optimized lead times. OptiMOS low-voltage MOSFETs for power delivery enable designs with less parts leading to BOM cost reduction. OptiMOS PD features quality products in compact, lightweight packages.

Logic level availability

Excellent thermal behaviour

100% avalanche tested

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