MOSFETs | N-Channel | P-Channel | RS
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    MOSFETs

    MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

    These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

    What are depletion and enhancement modes?

    MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

    How do MOSFETs work?

    The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

    N-Channel vs. P-Channel MOSFETs

    N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

    P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

    18737 Products showing for MOSFETs

    Wolfspeed
    -
    -
    1200 V
    4.6 mΩ
    -
    -
    3.6V
    -
    1.8V
    -
    -4 V, 19 V
    -
    50 mW
    -
    -
    80mm
    +175 °C
    1
    SiC
    1330 nC @ 4/15V
    53mm
    Infineon
    N
    100 A
    1200 V
    0.0113 Ω
    AG-EASY2B
    F4
    5.55V
    Screw Mount
    -
    -
    -
    -
    -
    -
    -
    -
    -
    4
    SiC
    -
    -
    Vishay
    N
    10 A
    400 V
    550 mΩ
    TO-220AB
    -
    -
    Through Hole
    2V
    3
    -30 V, +30 V
    Enhancement
    125 W
    -
    Single
    10.41mm
    +150 °C
    1
    Si
    36 nC @ 10 V
    4.7mm
    Vishay
    N
    20 A
    500 V
    270 mΩ
    TO-247AC
    -
    -
    Through Hole
    3V
    3
    -30 V, +30 V
    Enhancement
    250 W
    -
    Single
    15.87mm
    +150 °C
    1
    Si
    65 nC @ 10 V
    5.31mm
    Infineon
    N
    130 A
    200 V
    10 mΩ
    TO-247AC
    HEXFET
    5V
    Through Hole
    3V
    3
    -30 V, +30 V
    Enhancement
    520 W
    -
    Single
    15.87mm
    +175 °C
    1
    Si
    161 nC @ 10 V
    5.31mm
    Vishay Siliconix
    P
    100 A
    40 V
    10 mΩ
    DPAK (TO-252)
    TrenchFET
    2.5V
    Surface Mount
    1.5V
    3
    ±20 V
    Enhancement
    107 W
    -
    Single
    6.73mm
    +175 °C
    1
    Si
    185 nC @ 10 V
    2.38mm
    Infineon
    N
    171 A
    30 V
    3.2 mΩ
    TO-220AB
    HEXFET
    2.2V
    Through Hole
    1.2V
    3
    -20 V, +20 V
    Enhancement
    125 W
    -
    -
    10.67mm
    +175 °C
    1
    -
    40 nC @ 4.5 V
    4.83mm
    Vishay
    N
    14 A
    250 V
    280 mΩ
    D2PAK (TO-263)
    -
    -
    Surface Mount
    2V
    3
    -20 V, +20 V
    Enhancement
    3.1 W
    -
    Single
    10.67mm
    +150 °C
    1
    Si
    68 nC @ 10 V
    9.65mm
    Vishay
    N
    3.6 A
    600 V
    2.2 Ω
    TO-220AB
    -
    -
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    74 W
    -
    Single
    10.41mm
    +150 °C
    1
    Si
    31 nC @ 10 V
    4.7mm
    Infineon
    -
    32 A
    30 V
    -
    MG-WDSON-5
    HEXFET
    -
    Surface Mount
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Infineon
    N
    17 A
    100 V
    90 mΩ
    TO-220AB
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    70 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    37 nC @ 10 V
    4.69mm
    onsemi
    N
    3 A
    60 V
    120 mΩ
    SOT-223
    -
    2V
    Surface Mount
    -
    3
    -15 V, +15 V
    Enhancement
    2.1 W
    -
    Single
    6.5mm
    +175 °C
    1
    Si
    7.6 nC @ 5 V
    3.5mm
    ROHM
    N
    100 A
    40 V
    -
    HSOP8
    -
    -
    Surface Mount
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Infineon
    N
    260 A
    30 V
    2 mΩ
    TO-220AB
    HEXFET
    2.35V
    Through Hole
    1.35V
    3
    -20 V, +20 V
    Enhancement
    230 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    57 nC @ 4.5 V
    4.83mm
    Infineon
    N
    64 A
    30 V
    16 mΩ
    TO-220AB
    IRL3103PbF
    -
    Through Hole
    1V
    3 + Tab
    16 V
    Enhancement
    94 W
    -
    Single
    10.54mm
    +175 °C
    1
    -
    33 nC @ 4.5 V
    4.69mm
    Infineon
    P
    14 A
    100 V
    200 mΩ
    TO-220AB
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    79 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    58 nC @ 10 V
    4.69mm
    Infineon
    N
    92 A
    30 V
    5 mΩ
    TO-220AB
    HEXFET
    2.35V
    Through Hole
    1.35V
    3
    -20 V, +20 V
    Enhancement
    75 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    15 nC @ 4.5 V
    4.83mm
    onsemi
    P
    15.5 A
    60 V
    150 mΩ
    DPAK (TO-252)
    -
    2V
    Surface Mount
    -
    3
    -20 V, +20 V
    Enhancement
    65 W
    -
    Single
    6.73mm
    +175 °C
    1
    Si
    15 nC @ 5 V
    6.22mm
    Vishay
    N
    23 A
    500 V
    235 mΩ
    TO-247AC
    -
    -
    Through Hole
    3V
    3
    -30 V, +30 V
    Enhancement
    370 W
    -
    Single
    15.87mm
    +150 °C
    1
    Si
    150 nC @ 10 V
    5.31mm
    Infineon
    N
    17 A
    100 V
    155 mΩ
    DPAK (TO-252)
    HEXFET
    2V
    Surface Mount
    1V
    3
    -16 V, +16 V
    Enhancement
    79 W
    -
    Single
    6.73mm
    +175 °C
    1
    Si
    34 nC @ 5 V
    6.22mm
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