MOSFETs | N-Channel | P-Channel | RS
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    MOSFETs

    MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals. It acts very similarly to a switch and is used for switching or amplifying electronic signals.

    These semiconductor devices are ICs (integrated circuits) which are mounted onto PCBs. MOSFETs come in a range of standard package types such as DPAK, D2PAK, DFN, I2PAK, SOIC, SOT-223 and TO-220. For more information about MOSFETs, please see our complete guide to MOSFETs.

    What are depletion and enhancement modes?

    MOSFET transistors have two modes; depletion and enhancement. Depletion MOSFETs work like a closed switch. The current passes through when no current is applied. The current flow will stop if a negative voltage is applied. Enhancement mode MOSFETs are like a variable resistor and are generally more popular than the depletion mode MOSFETs. They come in n-channel or p-channel variants.

    How do MOSFETs work?

    The pins on a MOSFET package are the Source, Gate and Drain. When a voltage is applied between the Gate and the Source terminals, current can pass through from the Drain to the Source pins. When the voltage applied to the Gate changes, the resistance from the Drain to the Source will change too. The lower the voltage applied, the higher the resistance. As the voltage increases, the resistance from the Drain to Source will decrease. Power MOSFETs are like standard MOSFETs but they are designed to handle a higher level of power.

    N-Channel vs. P-Channel MOSFETs

    N-Channel MOSFETs contain additional electrons which are free to move around. They are a more popular channel type. N-Channel MOSFETs work when a positive charge is applied to the gate terminal.

    P-Channel MOSFETS substrate contains electrons and electron holes. P-Channel MOSFETs are connected to a positive voltage. These MOSFETs turn on when the voltage supplied to the Gate terminal is lower than the Source voltage.

    18564 Products showing for MOSFETs

    Infineon
    P
    19 A
    55 V
    -
    D2PAK
    HEXFET
    -
    Surface Mount
    -
    3
    -
    Enhancement
    -
    -
    -
    -
    -
    2
    Silicon
    -
    -
    Infineon
    P
    80 A
    40 V
    -
    PG-TO263-3-2
    -
    -
    Surface Mount
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Infineon
    N
    33 A
    150 V
    -
    IPAK
    HEXFET
    -
    Through Hole
    -
    3
    -
    Enhancement
    -
    -
    -
    -
    -
    2
    Silicon
    -
    -
    Infineon
    N
    47 A
    55 V
    22 mΩ
    TO-220AB
    HEXFET
    2V
    Through Hole
    1V
    3
    -16 V, +16 V
    Enhancement
    110 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    48 nC @ 5 V
    4.69mm
    Infineon
    N
    49 A
    55 V
    17.5 mΩ
    TO-220AB
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    94 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    63 nC @ 10 V
    9.02mm
    Infineon
    N
    80 A
    75 V
    9 mΩ
    TO-220AB
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    140 W
    -
    Single
    10.66mm
    +175 °C
    1
    Si
    56 nC @ 10 V
    4.82mm
    Infineon
    N
    70 A
    40 V
    4.8 mΩ
    TO-220
    OptiMOS™ 3
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    79 W
    -
    Single
    10.36mm
    +175 °C
    1
    Si
    31 nC @ 10 V
    4.572mm
    Infineon
    N
    22 A
    700 V
    0.11 Ω
    TO-220
    CoolMOS™
    4.5V
    Through Hole
    -
    3
    -
    -
    -
    -
    -
    -
    -
    1
    -
    -
    -
    Infineon
    N
    210 A
    60 V
    3 mΩ
    TO-220AB
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    300 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    120 nC @ 10 V
    4.83mm
    Toshiba
    N
    60 A
    120 V
    13.8 mΩ
    TO-220SIS
    TK
    4V
    Through Hole
    -
    3
    -20 V, +20 V
    Enhancement
    30 W
    -
    Single
    10mm
    +150 °C
    1
    Si
    34 nC @ 10 V
    4.5mm
    Infineon
    N
    92 A
    30 V
    -
    TO-220
    HEXFET
    -
    Through Hole
    -
    3
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    Silicon
    -
    -
    Infineon
    N
    41 A
    700 V
    0.225 Ω
    TO-220
    CoolMOS™
    4V
    Through Hole
    -
    3
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    -
    -
    -
    onsemi
    N
    19 A
    650 V
    165 mΩ
    TO-220
    -
    4.5V
    Through Hole
    2.5V
    3
    ±30 V
    Enhancement
    154 W
    -
    Single
    10.67mm
    +150 °C
    1
    -
    39 nC @ 10 V
    4.7mm
    IXYS
    N
    115 A
    200 V
    18 mΩ
    SOT-227
    HiperFET, Polar
    5V
    Screw Mount
    -
    4
    -20 V, +20 V
    Enhancement
    680 W
    -
    Single
    38.23mm
    +175 °C
    1
    Si
    240 nC @ 10 V
    25.42mm
    Infineon
    N
    17 A
    100 V
    90 mΩ
    TO-220AB
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    70 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    37 nC @ 10 V
    4.69mm
    onsemi
    N
    79 A
    150 V
    48 mΩ
    D2PAK (TO-263)
    PowerTrench
    -
    Surface Mount
    2V
    3
    -20 V, +20 V
    Enhancement
    310 W
    -
    Single
    10.67mm
    +175 °C
    1
    Si
    82 nC @ 10 V
    11.33mm
    Infineon
    N
    33 A
    100 V
    44 mΩ
    TO-220AB
    HEXFET
    4V
    Through Hole
    2V
    3
    -20 V, +20 V
    Enhancement
    130 W
    -
    Single
    10.54mm
    +175 °C
    1
    Si
    71 nC @ 10 V
    4.69mm
    STMicroelectronics
    -
    -
    -
    -
    DPAK (TO-252)
    -
    -
    Surface Mount
    -
    3
    -
    -
    15 W
    -
    Single
    6.6mm
    +150 °C
    1
    -
    -
    6.2mm
    Infineon
    N
    84 A
    60 V
    0.012 Ω
    D2PAK (TO-263)
    HEXFET
    4V
    Surface Mount
    -
    3
    -
    Enhancement
    -
    -
    -
    -
    -
    1
    Silicon
    -
    -
    onsemi
    N
    2.5 A
    30 V
    140 mΩ
    SOT-23
    -
    3V
    Surface Mount
    -
    3
    -20 V, +20 V
    Enhancement
    730 mW
    -
    Single
    3.04mm
    +150 °C
    1
    Si
    3.6 nC @ 10 V
    1.4mm
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