onsemi NTF3055L108 Type N-Channel MOSFET, 3 A, 60 V Enhancement, 4-Pin SOT-223 NTF3055L108T1G
- RS stock no.:
- 463-307
- Distrelec Article No.:
- 304-37-287
- Mfr. Part No.:
- NTF3055L108T1G
- Manufacturer:
- onsemi
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 20 units)*
R 221,12
(exc. VAT)
R 254,28
(inc. VAT)
FREE delivery for orders over R 1,500.00
Supply shortage
- Plus 3,460 left, shipping from 01 June 2026
Our current stock is limited and our suppliers are expecting shortages.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 11.056 | R 221.12 |
| 100 - 380 | R 10.779 | R 215.58 |
| 400 - 980 | R 10.456 | R 209.12 |
| 1000 - 1980 | R 10.038 | R 200.76 |
| 2000 + | R 9.636 | R 192.72 |
*price indicative
- RS stock no.:
- 463-307
- Distrelec Article No.:
- 304-37-287
- Mfr. Part No.:
- NTF3055L108T1G
- Manufacturer:
- onsemi
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | NTF3055L108 | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 120mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.2V | |
| Maximum Power Dissipation Pd | 2.1W | |
| Typical Gate Charge Qg @ Vgs | 7.6nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.57mm | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series NTF3055L108 | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 120mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.2V | ||
Maximum Power Dissipation Pd 2.1W | ||
Typical Gate Charge Qg @ Vgs 7.6nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.57mm | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
N-Channel Power MOSFET, 60V, ON Semiconductor
MOSFET Transistors, ON Semiconductor
Related links
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