Vishay IRF Type N-Channel MOSFET, 14 A, 250 V Enhancement, 3-Pin TO-263 IRF644SPBF
- RS stock no.:
- 542-9311
- Distrelec Article No.:
- 171-15-124
- Mfr. Part No.:
- IRF644SPBF
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 unit)*
R 69,74
(exc. VAT)
R 80,20
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 300 unit(s) ready to ship from another location
- Plus 853 unit(s) shipping from 20 February 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 24 | R 69.74 |
| 25 - 99 | R 68.00 |
| 100 - 249 | R 65.96 |
| 250 - 499 | R 63.32 |
| 500 + | R 60.79 |
*price indicative
- RS stock no.:
- 542-9311
- Distrelec Article No.:
- 171-15-124
- Mfr. Part No.:
- IRF644SPBF
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | TO-263 | |
| Series | IRF | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 68nC | |
| Maximum Power Dissipation Pd | 3.1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.8V | |
| Maximum Operating Temperature | 150°C | |
| Width | 9.65 mm | |
| Length | 10.67mm | |
| Height | 4.83mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type TO-263 | ||
Series IRF | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 68nC | ||
Maximum Power Dissipation Pd 3.1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.8V | ||
Maximum Operating Temperature 150°C | ||
Width 9.65 mm | ||
Length 10.67mm | ||
Height 4.83mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
Related links
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