N-Channel MOSFET, 260 A, 30 V, 3-Pin TO-220AB Infineon IRLB3813PBF

RS stock no.:: 913-4032
Mfr. Part No.:: IRLB3813PBF
Manufacturer:: Infineon

N-Channel MOSFET, 260 A, 30 V, 3-Pin TO-220AB Infineon IRLB3813PBF

774 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (In a Tube of 50)

R 25,451

(exc. VAT)

R 29,269

(inc. VAT)

Units	Per unit	Per Tube*
50 - 50	R 25,451	R 1 272,55
100 - 150	R 24,814	R 1 240,70
200 - 450	R 24,07	R 1 203,50
500 - 950	R 23,107	R 1 155,35
1000 +	R 22,183	R 1 109,15

*price indicative

RS stock no.:: 913-4032
Mfr. Part No.:: IRLB3813PBF
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	260 A
Maximum Drain Source Voltage	30 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.35V
Minimum Gate Threshold Voltage	1.35V
Maximum Power Dissipation	230 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Transistor Material	Si
Maximum Operating Temperature	+175 °C
Length	10.67mm
Typical Gate Charge @ Vgs	57 nC @ 4.5 V
Width	4.83mm
Minimum Operating Temperature	-55 °C
Height	9.02mm

N-Channel MOSFET, 260 A, 30 V, 3-Pin TO-220AB Infineon IRLB3813PBF

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