IXYS HiperFET, Polar Type N-Channel MOSFET, 115 A, 300 V Enhancement, 4-Pin SOT-227 IXFN140N30P

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Subtotal (1 unit)*

R 618,70

(exc. VAT)

R 711,50

(inc. VAT)

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  • 41 unit(s) shipping from 11 March 2026
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Units
Per unit
1 - 4R 618.70
5 - 24R 603.23
25 - 99R 585.13
100 - 249R 561.72
250 +R 539.25

*price indicative

Packaging Options:
RS stock no.:
193-739
Distrelec Article No.:
302-53-363
Mfr. Part No.:
IXFN140N30P
Manufacturer:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

115A

Maximum Drain Source Voltage Vds

300V

Package Type

SOT-227

Series

HiperFET, Polar

Mount Type

Panel

Pin Count

4

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

185nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

700W

Maximum Gate Source Voltage Vgs

20 V

Maximum Operating Temperature

150°C

Height

9.6mm

Width

25.07 mm

Standards/Approvals

No

Length

38.2mm

Automotive Standard

No

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