Vishay TrenchFET Type N-Channel MOSFET, 8.3 A, 100 V Enhancement, 8-Pin SO-8 Si4056ADY-T1-GE3

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Subtotal (1 pack of 10 units)*

R 145,68

(exc. VAT)

R 167,53

(inc. VAT)

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Units
Per unit
Per Pack*
10 - 40R 14.568R 145.68
50 - 90R 14.204R 142.04
100 - 240R 13.778R 137.78
250 - 990R 13.227R 132.27
1000 +R 12.698R 126.98

*price indicative

Packaging Options:
RS stock no.:
228-2819
Mfr. Part No.:
Si4056ADY-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

8.3A

Maximum Drain Source Voltage Vds

100V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

29.2mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

19.2nC

Maximum Power Dissipation Pd

5W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Height

1.75mm

Standards/Approvals

No

Automotive Standard

No

The Vishay TrenchFET Gen IV N-Channel power MOSFET is use for load switch, circuit protection and motor drive control.

Very low RDS x Qg figure-of-merit (FOM)

Tuned for the lowest RDS x Qoss FOM

Logic level gate drive

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