Vishay TrenchFET N-Channel MOSFET, 40 A, 30 V Enhancement, 8-Pin SO-8 SIRA06DP-T1-GE3

Currently unavailable
Sorry, we don't know when this will be back in stock.
RS stock no.:
165-7074
Mfr. Part No.:
SIRA06DP-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

N

Product Type

MOSFET

Maximum Continuous Drain Current Id

40A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.5mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

-16V, +20V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

51nC

Maximum Power Dissipation Pd

62.5W

Forward Voltage Vf

0.73V

Maximum Operating Temperature

150°C

Height

1.12mm

Length

6.25mm

Width

5.26mm

Standards/Approvals

No

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy