Vishay TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIRA00DP-T1-GE3

Image representative of range

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 5 units)*

R 247,54

(exc. VAT)

R 284,67

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • 45 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
5 - 45R 49.508R 247.54
50 - 245R 48.27R 241.35
250 - 995R 46.822R 234.11
1000 - 2995R 44.95R 224.75
3000 +R 43.152R 215.76

*price indicative

Packaging Options:
RS stock no.:
787-9367
Mfr. Part No.:
SIRA00DP-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Package Type

SO-8

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.35mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.1V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

147nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

104W

Maximum Operating Temperature

150°C

Standards/Approvals

No

Width

5.26 mm

Length

6.25mm

Height

1.12mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links