Vishay TrenchFET Type N-Channel MOSFET, 100 A, 30 V Enhancement, 8-Pin SO-8 SIRA00DP-T1-GE3

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Subtotal (1 pack of 5 units)*

R 257,25

(exc. VAT)

R 295,85

(inc. VAT)

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  • 40 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
5 - 45R 51.45R 257.25
50 - 245R 50.164R 250.82
250 - 995R 48.66R 243.30
1000 - 2995R 46.714R 233.57
3000 +R 44.846R 224.23

*price indicative

Packaging Options:
RS stock no.:
787-9367
Mfr. Part No.:
SIRA00DP-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SO-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.35mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

147nC

Maximum Power Dissipation Pd

104W

Forward Voltage Vf

1.1V

Maximum Operating Temperature

150°C

Standards/Approvals

No

Height

1.12mm

Length

6.25mm

Automotive Standard

No

N-Channel MOSFET, TrenchFET Gen IV, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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