Infineon HEXFET Type N-Channel MOSFET, 79 A, 60 V Enhancement, 3-Pin TO-220

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Subtotal (1 pack of 5 units)*

R 89,84

(exc. VAT)

R 103,315

(inc. VAT)

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Units
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Per Pack*
5 - 20R 17.968R 89.84
25 - 45R 17.518R 87.59
50 - 95R 16.992R 84.96
100 - 245R 16.312R 81.56
250 +R 15.66R 78.30

*price indicative

RS stock no.:
688-6800
Mfr. Part No.:
IRF1018EPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

79A

Maximum Drain Source Voltage Vds

60V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

8mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

46nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

110W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Length

10.67mm

Standards/Approvals

No

Width

4.83 mm

Height

9.02mm

Distrelec Product Id

304-43-449

Automotive Standard

No

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