N-Channel MOSFET, 260 A, 30 V, 3-Pin TO-220AB Infineon IRLB3813PBF

RS stock no.:: 725-9313
Mfr. Part No.:: IRLB3813PBF
Manufacturer:: Infineon

N-Channel MOSFET, 260 A, 30 V, 3-Pin TO-220AB Infineon IRLB3813PBF

128 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Not Available for premium delivery

Price (Excl VAT) Each (In a Pack of 2)

R 30,30

(exc. VAT)

R 34,84

(inc. VAT)

Units	Per unit	Per Pack*
2 - 8	R 30,30	R 60,60
10 - 18	R 29,545	R 59,09
20 - 38	R 28,66	R 57,32
40 - 98	R 27,515	R 55,03
100 +	R 26,415	R 52,83

*price indicative

RS stock no.:: 725-9313
Mfr. Part No.:: IRLB3813PBF
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	260 A
Maximum Drain Source Voltage	30 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	2 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2.35V
Minimum Gate Threshold Voltage	1.35V
Maximum Power Dissipation	230 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Typical Gate Charge @ Vgs	57 nC @ 4.5 V
Transistor Material	Si
Width	4.83mm
Length	10.67mm
Maximum Operating Temperature	+175 °C
Minimum Operating Temperature	-55 °C
Height	9.02mm

N-Channel MOSFET, 260 A, 30 V, 3-Pin TO-220AB Infineon IRLB3813PBF

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