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Toshiba DTMOSIV Type N-Channel MOSFET, 8 A, 600 V Enhancement, 3-Pin TO-252 TK8P60W5,RVQ(S

RS stock no.:: 133-2804
Mfr. Part No.:: TK8P60W5,RVQ(S
Manufacturer:: Toshiba

Toshiba DTMOSIV Type N-Channel MOSFET, 8 A, 600 V Enhancement, 3-Pin TO-252 TK8P60W5,RVQ(S

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Temporarily out of stock

RS stock no.:: 133-2804
Mfr. Part No.:: TK8P60W5,RVQ(S
Manufacturer:: Toshiba

Specification

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Toshiba
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-252
	Series	DTMOSIV
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	560mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	80W
	Typical Gate Charge Qg @ Vgs	22nC
	Forward Voltage Vf	-1.7V
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.6mm
	Height	2.3mm
	Width	6.1 mm
	Automotive Standard	No

	Select all
	Brand Toshiba
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-252
	Series DTMOSIV
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 560mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 80W
	Typical Gate Charge Qg @ Vgs 22nC
	Forward Voltage Vf -1.7V
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.6mm
	Height 2.3mm
	Width 6.1 mm
	Automotive Standard No

COO (Country of Origin):: JP

Toshiba DTMOSIV Type N-Channel MOSFET, 8 A, 600 V Enhancement, 3-Pin TO-252 TK8P60W5,RVQ(S

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