Infineon OptiMOS N-Channel MOSFET, 30 A, 75 V Enhancement, 3-Pin TO-252 IPD30N08S2L21ATMA1
- RS stock no.:
- 827-5120
- Mfr. Part No.:
- IPD30N08S2L21ATMA1
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 25 units)*
R 468,825
(exc. VAT)
R 539,15
(inc. VAT)
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In Stock
- Plus 2,400 unit(s) shipping from 15 September 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 75 | R 18.753 | R 468.83 |
| 100 - 475 | R 18.284 | R 457.10 |
| 500 - 1225 | R 17.736 | R 443.40 |
| 1250 - 2475 | R 17.026 | R 425.65 |
| 2500 + | R 16.345 | R 408.63 |
*price indicative
- RS stock no.:
- 827-5120
- Mfr. Part No.:
- IPD30N08S2L21ATMA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-252 | |
| Series | OptiMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 26mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 136W | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 6.73mm | |
| Standards/Approvals | No | |
| Height | 2.41mm | |
| Width | 6.22mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-252 | ||
Series OptiMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 26mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 136W | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Maximum Operating Temperature 175°C | ||
Length 6.73mm | ||
Standards/Approvals No | ||
Height 2.41mm | ||
Width 6.22mm | ||
Automotive Standard AEC-Q101 | ||
Not Applicable
Infineon OptiMOS Series MOSFET, 75V Maximum Drain Source Voltage, 30A Maximum Continuous Drain Current - IPD30N08S2L21ATMA1
This MOSFET is a power switching transistor designed for demanding electronic systems, providing controlled conduction between drain and source in N-channel enhancement-mode configurations. It is intended for surface-mount assembly in compact power designs and for use where elevated operating temperatures and automotive-grade qualification are required.
Features and Benefits:
• 75V drain voltage enabling robust high-voltage switching
• 30A continuous current supporting substantial load delivery
• 26mΩ low Rds(on) reducing conduction losses
• 136W dissipation capacity aiding thermal margin in designs
• 56nC typical gate charge improving switching speed control
• ±20V gate tolerance allowing flexible gate-drive schemes
• 30A continuous current supporting substantial load delivery
• 26mΩ low Rds(on) reducing conduction losses
• 136W dissipation capacity aiding thermal margin in designs
• 56nC typical gate charge improving switching speed control
• ±20V gate tolerance allowing flexible gate-drive schemes
Applications
• Suitable for automotive DC-DC converter stages
• Ideal for synchronous rectification in power supplies
• Used with motor-drive inverter front-end circuits
• Can be used for high-efficiency point-of-load converters
• Suitable for board-level power management in vehicles
• Ideal for synchronous rectification in power supplies
• Used with motor-drive inverter front-end circuits
• Can be used for high-efficiency point-of-load converters
• Suitable for board-level power management in vehicles
What packaging type should designers expect for PCB layout?
The device is supplied in a TO-252 package intended for surface mounting, which affects land-pattern and thermal-pad design.
How does the device handle extreme ambient conditions?
It is rated to operate across a wide temperature span from -55°C up to 175°C to suit high-temperature environments.
What gate-drive considerations are required for control circuitry?
The maximum gate-source rating is ±20V
gate-drive circuits should limit excursions within this range and account for the 56nC typical gate charge when sizing drivers.
Are there specific thermal performance constraints to plan for?
With a maximum power dissipation of 136W, thermal management must consider conduction paths and board-level heat sinking to maintain junction limits.
Related links
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-252
- Infineon OptiMOS Type N-Channel MOSFET & Diode 75 V Enhancement, 3-Pin TO-263
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220 IPP80N08S2L07AKSA1
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220 IPP100N08S2L07AKSA1
- Infineon OptiMOS Type N-Channel MOSFET & Diode 75 V Enhancement, 3-Pin TO-263 IPB100N08S2L07ATMA1
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-252