Infineon OptiMOS Type N-Channel MOSFET, 80 A, 75 V Enhancement, 3-Pin TO-220 IPP80N08S2L07AKSA1
- RS stock no.:
- 145-9275
- Mfr. Part No.:
- IPP80N08S2L07AKSA1
- Manufacturer:
- Infineon
Image representative of range
Subtotal (1 tube of 50 units)*
R 2 707,30
(exc. VAT)
R 3 113,40
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 11 January 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Tube* |
|---|---|---|
| 50 + | R 54.146 | R 2,707.30 |
*price indicative
- RS stock no.:
- 145-9275
- Mfr. Part No.:
- IPP80N08S2L07AKSA1
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 75V | |
| Package Type | TO-220 | |
| Series | OptiMOS | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 6.8mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 183nC | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 0.9V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 10.36mm | |
| Height | 15.95mm | |
| Width | 4.57 mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 75V | ||
Package Type TO-220 | ||
Series OptiMOS | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 6.8mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 183nC | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 0.9V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 10.36mm | ||
Height 15.95mm | ||
Width 4.57 mm | ||
Automotive Standard AEC-Q101 | ||
Not Applicable
- COO (Country of Origin):
- CN
Infineon OptiMOS™ Power MOSFET Family
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.
N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green package (lead free)
Ultra low Rds(on)
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-220 IPP80N06S209AKSA2
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin TO-220 IPP057N06N3GXKSA1
- Infineon OptiMOS Type N-Channel MOSFET 75 V Enhancement, 3-Pin TO-220 IPP100N08S2L07AKSA1
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin TO-263