Infineon OptiMOS Type N-Channel MOSFET, 30 A, 55 V Enhancement, 3-Pin TO-252 IPD30N06S2L13ATMA4

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Subtotal (1 pack of 10 units)*

R 143,81

(exc. VAT)

R 165,38

(inc. VAT)

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  • 9,880 unit(s) ready to ship from another location
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Units
Per unit
Per Pack*
10 - 10R 14.381R 143.81
20 - 90R 14.021R 140.21
100 - 240R 13.60R 136.00
250 - 490R 13.056R 130.56
500 +R 12.534R 125.34

*price indicative

Packaging Options:
RS stock no.:
214-4374
Mfr. Part No.:
IPD30N06S2L13ATMA4
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

55V

Package Type

TO-252

Series

OptiMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

13mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

136W

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

54nC

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

6.65mm

Width

6.42 mm

Height

2.35mm

Automotive Standard

AEC-Q101

This Infineon OptiMOS MOSFET provides high current capability, and Lowest switching and conduction power losses for highest thermal efficiency. It is 100% Avalanche tested.

It is lead-free

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