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    N-Channel MOSFET, 30 A, 75 V, 3-Pin DPAK Infineon IPD30N08S2L21ATMA1

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    Subtotal (1 reel of 2500 units)**

    R  26 180 00

    (exc. VAT)

    R  30 107 50

    (inc. VAT)

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    2500 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*

    * Delivery dates may change based on your chosen quantity and delivery address.

    Not Available for premium delivery
    Units
    Per unit
    Per Reel**
    2500 +R 10,472R 26 180,00

    **price indicative

    RS stock no.:
    165-5971
    Mfr. Part No.:
    IPD30N08S2L21ATMA1
    Manufacturer:
    Infineon
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    Manufacturer

    Infineon

    Channel Type

    N

    Maximum Continuous Drain Current

    30 A

    Maximum Drain Source Voltage

    75 V

    Series

    OptiMOS™

    Package Type

    DPAK (TO-252)

    Mounting Type

    Surface Mount

    Pin Count

    3

    Maximum Drain Source Resistance

    26 mΩ

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    4V

    Minimum Gate Threshold Voltage

    2.1V

    Maximum Power Dissipation

    136 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -20 V, +20 V

    Number of Elements per Chip

    1

    Length

    6.73mm

    Maximum Operating Temperature

    +175 °C

    Typical Gate Charge @ Vgs

    56 nC @ 10 V

    Transistor Material

    Si

    Width

    6.22mm

    Height

    2.41mm

    Minimum Operating Temperature

    -55 °C

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