P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK Infineon SPD04P10PLGBTMA1

RS stock no.:: 826-9064
Mfr. Part No.:: SPD04P10PLGBTMA1
Manufacturer:: Infineon

P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK Infineon SPD04P10PLGBTMA1

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999999 Available in South Africa for same day despatch or collection. Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

999999 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

Price (Excl VAT) Each (In a Pack of 50)

R 11,666

(exc. VAT)

R 13,416

(inc. VAT)

Units	Per unit	Per Pack*
50 +	R 11,666	R 583,30

*price indicative

RS stock no.:: 826-9064
Mfr. Part No.:: SPD04P10PLGBTMA1
Manufacturer:: Infineon

SPD04P10PL G, SIPMOS Power-Transistor
ESD Control Selection Guide V1

Attribute	Value
Channel Type	P
Maximum Continuous Drain Current	4.2 A
Maximum Drain Source Voltage	100 V
Series	SIPMOS®
Package Type	DPAK (TO-252)
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	1.05 Ω
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	38 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Length	6.73mm
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	12 nC @ 10 V
Number of Elements per Chip	1
Transistor Material	Si
Width	6.22mm
Minimum Operating Temperature	-55 °C
Height	2.41mm

P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK Infineon SPD04P10PLGBTMA1

Infineon SIPMOS® P-Channel MOSFETs