Name: Infineon SIPMOS® P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK SPD04P10PLGBTMA1
Brand: Infineon
SKU: 826-9064
Price: 13.42 ZAR
Availability: OutOfStock

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	P
	Maximum Continuous Drain Current	4.2 A
	Maximum Drain Source Voltage	100 V
	Package Type	DPAK (TO-252)
	Series	SIPMOS®
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	1.05 Ω
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	2V
	Minimum Gate Threshold Voltage	1V
	Maximum Power Dissipation	38 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Transistor Material	Si
	Number of Elements per Chip	1
	Width	6.22mm
	Length	6.73mm
	Typical Gate Charge @ Vgs	12 nC @ 10 V
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-55 °C
	Height	2.41mm

	Select all
	Brand Infineon
	Channel Type P
	Maximum Continuous Drain Current 4.2 A
	Maximum Drain Source Voltage 100 V
	Package Type DPAK (TO-252)
	Series SIPMOS®
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 1.05 Ω
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 2V
	Minimum Gate Threshold Voltage 1V
	Maximum Power Dissipation 38 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Transistor Material Si
	Number of Elements per Chip 1
	Width 6.22mm
	Length 6.73mm
	Typical Gate Charge @ Vgs 12 nC @ 10 V
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -55 °C
	Height 2.41mm

Not Applicable

Infineon SIPMOS® P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK SPD04P10PLGBTMA1

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