Infineon SIPMOS® P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK SPD04P10PLGBTMA1

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Subtotal (1 pack of 50 units)*

R 583,30

(exc. VAT)

R 670,80

(inc. VAT)

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Units
Per unit
Per Pack*
50 +R 11.666R 583.30

*price indicative

Packaging Options:
RS stock no.:
826-9064
Mfr. Part No.:
SPD04P10PLGBTMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

P

Maximum Continuous Drain Current

4.2 A

Maximum Drain Source Voltage

100 V

Series

SIPMOS®

Package Type

DPAK (TO-252)

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

1.05 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

38 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.73mm

Transistor Material

Si

Maximum Operating Temperature

+175 °C

Width

6.22mm

Typical Gate Charge @ Vgs

12 nC @ 10 V

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Height

2.41mm

Not Applicable

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