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    P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK Infineon SPD04P10PLGBTMA1

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    Subtotal (1 pack of 50 units)**

    R  583 30

    (exc. VAT)

    R  670 80

    (inc. VAT)

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    999999 Available in South Africa for same day despatch or collection. Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
    999999 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)

    * Delivery dates may change based on your chosen quantity and delivery address.

    Units
    Per unit
    Per Pack**
    50 +R 11,666R 583,30

    **price indicative

    Packaging Options:
    RS stock no.:
    826-9064
    Mfr. Part No.:
    SPD04P10PLGBTMA1
    Manufacturer:
    Infineon
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    Manufacturer

    Infineon

    Channel Type

    P

    Maximum Continuous Drain Current

    4.2 A

    Maximum Drain Source Voltage

    100 V

    Package Type

    DPAK (TO-252)

    Series

    SIPMOS®

    Mounting Type

    Surface Mount

    Pin Count

    3

    Maximum Drain Source Resistance

    1.05 Ω

    Channel Mode

    Enhancement

    Maximum Gate Threshold Voltage

    2V

    Minimum Gate Threshold Voltage

    1V

    Maximum Power Dissipation

    38 W

    Transistor Configuration

    Single

    Maximum Gate Source Voltage

    -20 V, +20 V

    Typical Gate Charge @ Vgs

    12 nC @ 10 V

    Transistor Material

    Si

    Width

    6.22mm

    Number of Elements per Chip

    1

    Maximum Operating Temperature

    +175 °C

    Length

    6.73mm

    Height

    2.41mm

    Minimum Operating Temperature

    -55 °C

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