Infineon HEXFET N-Channel MOSFET, 10 A, 100 V, 3-Pin DPAK IRLR120NTRPBF
- RS stock no.:
- 830-3344
- Mfr. Part No.:
- IRLR120NTRPBF
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 pack of 20 units)*
R 115,54
(exc. VAT)
R 132,88
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 5.777 | R 115.54 |
| 100 - 480 | R 5.546 | R 110.92 |
| 500 - 980 | R 5.324 | R 106.48 |
| 1000 - 1980 | R 5.111 | R 102.22 |
| 2000 + | R 4.907 | R 98.14 |
*price indicative
- RS stock no.:
- 830-3344
- Mfr. Part No.:
- IRLR120NTRPBF
- Manufacturer:
- Infineon
Specification
Technical data sheets
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | HEXFET | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 265 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 48 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Transistor Material | Si | |
| Length | 6.73mm | |
| Typical Gate Charge @ Vgs | 20 nC @ 5 V | |
| Width | 6.22mm | |
| Number of Elements per Chip | 1 | |
| Maximum Operating Temperature | +175 °C | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 100 V | ||
Series HEXFET | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 265 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Transistor Material Si | ||
Length 6.73mm | ||
Typical Gate Charge @ Vgs 20 nC @ 5 V | ||
Width 6.22mm | ||
Number of Elements per Chip 1 | ||
Maximum Operating Temperature +175 °C | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- CN
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