N-Channel MOSFET, 4.2 A, 20 V, 3-Pin SOT-23 Diodes Inc DMN2075U-7
- RS stock no.:
- 751-4143
- Mfr. Part No.:
- DMN2075U-7
- Manufacturer:
- DiodesZetex
Bulk discount available
Subtotal (1 pack of 50 units)**
R 90 65
(exc. VAT)
R 104 25
(inc. VAT)
50 Available from UK/Europe in 4–6 working days for collection or delivery to major cities (Heavy, hazardous or lithium product excluded. Delivery T&C's apply)*
* Delivery dates may change based on your chosen quantity and delivery address.
FREE delivery for orders over R 1500
Not Available for premium delivery
Units | Per unit | Per Pack** |
|---|---|---|
| 50 - 200 | R 1,813 | R 90,65 |
| 250 - 450 | R 1,767 | R 88,35 |
| 500 - 1450 | R 1,714 | R 85,70 |
| 1500 - 2950 | R 1,646 | R 82,30 |
| 3000 + | R 1,58 | R 79,00 |
**price indicative
- RS stock no.:
- 751-4143
- Mfr. Part No.:
- DMN2075U-7
- Manufacturer:
- DiodesZetex
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Manufacturer | DiodesZetex | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.2 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 45 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 800 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Transistor Material | Si | |
| Width | 1.4mm | |
| Length | 3mm | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 7 nC @ 4.5 V | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.1mm | |
Select all | ||
|---|---|---|
Manufacturer DiodesZetex | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.2 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 45 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 800 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Transistor Material Si | ||
Width 1.4mm | ||
Length 3mm | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 7 nC @ 4.5 V | ||
Minimum Operating Temperature -55 °C | ||
Height 1.1mm | ||
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