DiodesZetex DMN N-Channel MOSFET, 5 A, 60 V Enhancement, 8-Pin SOIC DMN6066SSS-13
- RS stock no.:
- 823-4021
- Mfr. Part No.:
- DMN6066SSS-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 20 units)*
R 250,96
(exc. VAT)
R 288,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 24 March 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 12.548 | R 250.96 |
| 100 - 280 | R 12.235 | R 244.70 |
| 300 - 1180 | R 11.868 | R 237.36 |
| 1200 - 2480 | R 11.393 | R 227.86 |
| 2500 + | R 10.938 | R 218.76 |
*price indicative
- RS stock no.:
- 823-4021
- Mfr. Part No.:
- DMN6066SSS-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOIC | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 97mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 2.81W | |
| Typical Gate Charge Qg @ Vgs | 10.3nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 0.89V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 4mm | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOIC | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 97mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 2.81W | ||
Typical Gate Charge Qg @ Vgs 10.3nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 0.89V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 4mm | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Automotive Standard AEC-Q101 | ||
N-Channel MOSFET, 40V to 90V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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