DiodesZetex DMN Type N-Channel MOSFET, 8 A, 60 V Enhancement, 4-Pin SOT-223
- RS stock no.:
- 182-6900
- Mfr. Part No.:
- DMN6069SE-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 reel of 2500 units)*
R 8 142,50
(exc. VAT)
R 9 365,00
(inc. VAT)
FREE delivery for orders over R 1,500.00
Temporarily out of stock
- Shipping from 09 February 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Reel* |
|---|---|---|
| 2500 - 5000 | R 3.257 | R 8,142.50 |
| 7500 + | R 3.175 | R 7,937.50 |
*price indicative
- RS stock no.:
- 182-6900
- Mfr. Part No.:
- DMN6069SE-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | DMN | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 16nC | |
| Maximum Power Dissipation Pd | 11W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.65mm | |
| Width | 3.55 mm | |
| Length | 6.55mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series DMN | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 16nC | ||
Maximum Power Dissipation Pd 11W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.65mm | ||
Width 3.55 mm | ||
Length 6.55mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
Motor control
Transformer driving switch
DC-DC Converters
Power management functions
Uninterrupted power supply
Related links
- DiodesZetex DMN Type N-Channel MOSFET 60 V Enhancement, 4-Pin SOT-223 DMN6069SE-13
- DiodesZetex DMN Type N-Channel MOSFET 30 V Enhancement, 4-Pin SOT-223
- DiodesZetex DMN Type N-Channel MOSFET 30 V Enhancement, 4-Pin SOT-223 DMN3032LE-13
- DiodesZetex DMN Type N-Channel MOSFET 30 V Enhancement, 4-Pin TO-252
- DiodesZetex DMN Type N-Channel MOSFET 60 V Enhancement, 8-Pin SOIC
- DiodesZetex DMN Type N-Channel MOSFET 30 V Enhancement, 8-Pin SOIC
- DiodesZetex DMN Type N-Channel MOSFET 30 V Enhancement, 8-Pin TSSOP
- DiodesZetex DMN Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerDI3333