DiodesZetex DMN Type N-Channel MOSFET, 8 A, 30 V Enhancement, 8-Pin SOIC DMN4800LSSL-13
- RS stock no.:
- 823-3233
- Mfr. Part No.:
- DMN4800LSSL-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
View bulk pricing optionSubtotal (1 pack of 50 units)*
R 297,90
(exc. VAT)
R 342,60
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,250 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 50 - 200 | R 5.958 | R 297.90 |
| 250 - 450 | R 5.809 | R 290.45 |
| 500 - 1200 | R 5.635 | R 281.75 |
| 1250 - 2450 | R 5.41 | R 270.50 |
| 2500 + | R 5.193 | R 259.65 |
*price indicative
- RS stock no.:
- 823-3233
- Mfr. Part No.:
- DMN4800LSSL-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | DMN | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 20mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.46W | |
| Forward Voltage Vf | 0.94V | |
| Typical Gate Charge Qg @ Vgs | 8.7nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Length | 4.95mm | |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series DMN | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 20mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.46W | ||
Forward Voltage Vf 0.94V | ||
Typical Gate Charge Qg @ Vgs 8.7nC | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Length 4.95mm | ||
Automotive Standard AEC-Q200, AEC-Q100, AEC-Q101 | ||
N-Channel MOSFET, 30V, Diodes Inc
MOSFET Transistors, Diodes Inc.
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