DiodesZetex DMN Type N-Channel MOSFET, 15 A, 30 V Enhancement, 8-Pin TSSOP DMN3020UTS-13
- RS stock no.:
- 182-7013
- Mfr. Part No.:
- DMN3020UTS-13
- Manufacturer:
- DiodesZetex
Image representative of range
Bulk discount available
Subtotal (1 pack of 25 units)*
R 229,15
(exc. VAT)
R 263,525
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 550 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | R 9.166 | R 229.15 |
| 50 - 75 | R 8.937 | R 223.43 |
| 100 - 475 | R 8.669 | R 216.73 |
| 500 - 975 | R 8.322 | R 208.05 |
| 1000 + | R 7.99 | R 199.75 |
*price indicative
- RS stock no.:
- 182-7013
- Mfr. Part No.:
- DMN3020UTS-13
- Manufacturer:
- DiodesZetex
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 15A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TSSOP | |
| Series | DMN | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 50mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1.4W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 27nC | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.02mm | |
| Length | 4.5mm | |
| Width | 3.1 mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 15A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TSSOP | ||
Series DMN | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 50mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1.4W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 27nC | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 1.02mm | ||
Length 4.5mm | ||
Width 3.1 mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Low Gate Threshold Voltage Low On-Resistance ESD Protected Gate Applications Battery Management Application Power Management Functions DC-DC Converters
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