Vishay SQ Rugged Type P-Channel MOSFET, 6.2 A, 30 V Enhancement, 8-Pin SOIC SQ4431EY-T1_GE3
- RS stock no.:
- 819-3920
- Mfr. Part No.:
- SQ4431EY-T1_GE3
- Manufacturer:
- Vishay
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Bulk discount available
Subtotal (1 pack of 20 units)*
R 253,36
(exc. VAT)
R 291,36
(inc. VAT)
FREE delivery for orders over R 1,500.00
In Stock
- 2,420 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 20 - 80 | R 12.668 | R 253.36 |
| 100 - 480 | R 12.351 | R 247.02 |
| 500 - 1480 | R 11.981 | R 239.62 |
| 1500 - 2480 | R 11.502 | R 230.04 |
| 2500 + | R 11.042 | R 220.84 |
*price indicative
- RS stock no.:
- 819-3920
- Mfr. Part No.:
- SQ4431EY-T1_GE3
- Manufacturer:
- Vishay
Specification
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | SQ Rugged | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 52mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 25nC | |
| Maximum Power Dissipation Pd | 6W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 4 mm | |
| Length | 5mm | |
| Height | 1.55mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series SQ Rugged | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 52mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 25nC | ||
Maximum Power Dissipation Pd 6W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 4 mm | ||
Length 5mm | ||
Height 1.55mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, SQ Rugged Series, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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